Semiconductor device for selectively performing isolation function and layout displacement method thereof

ABSTRACT

A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application of U.S. patent application Ser. No.17/412,588 filed Aug. 26,2021, which is a continuation application ofU.S. patent application Ser. No. 16/566,002, filed Sep. 10, 2019, nowU.S. Pat. No. 11,183,233, issued Nov. 23, 2021, which is a divisionalapplication of U.S. patent application Ser. No. 15/417,807, filed Jan.27, 2017, now U.S. Pat. No. 10,453,521, issued Oct. 22, 2019, in theU.S. Patent and Trademark Office, which claims priority from U.S.Provisional Patent Application No. 62/288,750 filed on Jan. 29, 2016, inthe U.S. Patent and Trademark Office, and from Korean Patent ApplicationNo. 10-2016-0058860 filed May 13, 2016, in the Korean IntellectualProperty Office, the discloses of which are incorporated herein byreference in their entireties.

BACKGROUND 1. Field

Apparatuses consistent with example embodiments relate to asemiconductor device, and more particularly, relate to a layout of asemiconductor device that selectively operates as an insulating circuitor a driving circuit.

2. Description of Related Art

A semiconductor device is gradually shrunk in size as the semiconductordevice is highly integrated and the storage capacity thereof increases.Accordingly, resolution of a semiconductor manufacturing process isincreasing. However, the increased resolution of the semiconductorfabricating process causes a decrease in a distance between gateelectrodes of the semiconductor device. In this case, an unintendedshort circuit or product defect also increases. For this reason,electrical insulation is also emerging as an issue.

In general, an insulating film produced by a separate process, such as ashallow trench isolation (STI) process, may be used for insulation ofthe semiconductor device. Alternatively, a method of increasing thedistance between the gate electrodes or inserting a dummy gate may beused for insulation of the semiconductor device. However, such methodsare inefficient because a chip size of the semiconductor device isincreased and an additional/extra process is performed.

SUMMARY

According to example embodiments, a system on chip includes a firstsemiconductor device including a first transistor and a secondtransistor, the first transistor and the second transistor including afirst gate electrode and a second gate electrode, respectively, thefirst semiconductor device being disposed on an active area disposed ona substrate, the active area extending in a first direction, and thefirst gate electrode and the second gate electrode extending in a seconddirection different from the first direction and disposed along thefirst direction. The system on chip further includes a secondsemiconductor device including a third transistor and a fourthtransistor, the third transistor and the fourth transistor including athird gate electrode and a fourth gate electrode, respectively, thesecond semiconductor device being disposed on the active area, and thethird gate electrode and the fourth gate electrode extending in thesecond direction and disposed along the first direction. In response tothe first transistor, the third transistor, and the fourth transistorbeing turned on, the second transistor is configured to turn off toelectrically insulate the first transistor from a device adjacent to thefirst transistor.

According to example embodiments, a semiconductor device includes anactive area disposed on a substrate and extending in a first direction,and a first transistor including a first gate electrode and first sourceand drain areas disposed on the active area, the first source and drainareas being disposed at opposite sides of the first gate electrode. Thesemiconductor device further includes a second transistor including asecond gate electrode and second source and drain areas disposed on theactive area, the second source and drain areas being disposed atopposite sides of the second gate electrode, and a third transistorincluding a third gate electrode and third source and drain areasdisposed on the active area, the third source and drain areas beingdisposed at opposite sides of the third gate electrode, and the firstgate electrode, the second gate electrode, and the third gate electrodeextending in a second direction different from the first direction anddisposed along the first direction. The second transistor is configuredto turn on and off, based on an operation mode of the semiconductordevice.

According to example embodiments, a semiconductor device includes afirst active area and a second active area extending in a firstdirection and disposed on a substrate along a second direction differentfrom the first direction, and a first transistor including a first gateelectrode and first source and drain areas, the first gate electrodebeing disposed on the first active area and the second active area andextending in the second direction, and the first source and drain areasbeing disposed on the first active area and disposed at opposite sidesof the first gate electrode. The semiconductor device further includes asecond transistor including a second gate electrode and second sourceand drain areas, the second gate electrode being disposed on the firstactive area and extending in the second direction, and the second sourceand drain areas being disposed on the first active area and disposed atopposite sides of the second gate electrode, and a third transistorincluding the first gate electrode and third source and drain areas, thethird source and drain areas being disposed on the second active areaand disposed at opposite sides of the first gate electrode. Thesemiconductor device further includes a fourth transistor including athird gate electrode and fourth source and drain areas, the third gateelectrode being disposed on the second active area and extending in thesecond direction, and the fourth source and drain areas being disposedon the second active area and disposed at opposite sides of the thirdgate electrode. A source or drain area that is shared by the firsttransistor and the second transistor, among the first source and drainareas and the second source and drain areas, is connected to a source ordrain area that is shared by the third transistor and the fourthtransistor, among the third source and drain areas and the fourth sourceand drain areas, and the second transistor and the fourth transistor areconfigured to turn on and off.

According to example embodiments, a semiconductor device includes afirst active area and a second active area extending in a firstdirection and disposed on a substrate along a second direction differentfrom the first direction, and a first transistor including a first gateelectrode and first source and drain areas, the first gate electrodebeing disposed on the first active area and the second active area andextending in the second direction, and the first source and drain areasbeing disposed on the first active area and disposed at opposite sidesof the first gate electrode. The semiconductor device further includes asecond transistor including a second gate electrode and second sourceand drain areas, the second gate electrode being disposed on the firstactive area and the second active area and extending in the seconddirection, and the second source and drain areas being disposed on thefirst active area and disposed at opposite sides of the second gateelectrode, and a third transistor including the first gate electrode andthird source and drain areas, the third source and drain areas beingdisposed on the second active area and disposed at opposite sides of thefirst gate electrode. The semiconductor device further includes a fourthtransistor including the second gate electrode and fourth source anddrain areas, the fourth source and drain areas being disposed on thesecond active area and disposed at opposite sides of the second gateelectrode. A source or drain area that is shared by the first transistorand the second transistor, among the first source and drain areas andthe second source and drain areas, is connected to a source or drainarea that is shared by the third transistor and the fourth transistor,among the third source and drain areas and the fourth source and drainareas.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a layout of a semiconductor deviceaccording to example embodiments.

FIG. 2 is a circuit diagram of a semiconductor device at a firstoperating mode, according to example embodiments.

FIG. 3 is a circuit diagram of a semiconductor device at a secondoperating mode, according to example embodiments.

FIG. 4 is a block diagram illustrating a System on Chip (SOC) accordingto example embodiments.

FIG. 5 is a block diagram illustrating one of first and second staticrandom access memories (SRAMs) illustrated in FIG. 4 .

FIG. 6 is a view illustrating waveforms of signals during a readoperation at the first SRAM illustrated in FIG. 4 .

FIG. 7 is a view illustrating waveforms of signals during a readoperation at the first SRAM illustrated in FIG. 4 .

FIG. 8 is a detailed circuit diagram of a delay chain circuit of FIG. 5.

FIG. 9 is a plan view illustrating a portion of a layout of the delaychain circuit illustrated in FIG. 8 .

FIG. 10 is a detailed circuit diagram of the delay chain circuit of FIG.5 .

FIG. 11 is a plan view illustrating a portion of a layout of the delaychain circuit illustrated in FIG. 10 .

FIG. 12 is a detailed circuit diagram of the delay chain circuit of FIG.5 .

FIG. 13 is a circuit diagram of the delay chain circuit illustrated inFIG. 12 , at a first operation mode.

FIG. 14 a circuit diagram of the delay chain circuit illustrated in FIG.12 , at a second operation mode.

FIG. 15 is a plan view illustrating a portion of a layout of the delaychain circuit illustrated in FIG. 12 .

FIG. 16 is a detailed circuit diagram of an input/output circuitillustrated in FIG. 5 .

FIG. 17 is a plan view illustrating a portion of a layout of a drivingcircuit illustrated in FIG. 16 .

FIG. 18 is a detailed circuit diagram of the input/output circuitillustrated in FIG. 5 .

FIG. 19 is a plan view illustrating a portion of a layout of a drivingcircuit illustrated in FIG. 18 .

FIG. 20 is a detailed circuit diagram of the input/output circuit ofFIG. 5 .

FIG. 21 is a plan view illustrating a portion of a layout of a drivingcircuit illustrated in FIG. 20 .

DETAILED DESCRIPTION

FIG. 1 is a plan view illustrating a layout of a semiconductor deviceaccording to example embodiments. FIG. 2 is a circuit diagram of asemiconductor device at a first operating mode, according to exampleembodiments. FIG. 3 is a circuit diagram of a semiconductor device at asecond operating mode, according to example embodiments.

Referring to FIG. 1 , an active region AR may be formed on a substrateSub. The active region AR may include source and drain areas and channelareas constituting a transistor. For example, the substrate Sub may be asilicon substrate, a germanium substrate, or a silicon on insulator(SOI) substrate.

First to third transistors TR1 to TR3 may be formed on the active regionAR. For example, the active region AR may be formed to extend in a firstdirection DR1. For example, each of the first to third transistors TR1to TR3 may be a PMOS or NMOS field effect transistor (FET). In FIG. 1 ,for descriptive convenience, it is assumed that the active region AR isan NMOS area, and each of the first to third transistors TR1 to TR3 isan NMOS FET.

The first to third transistors TR1 to TR3 may include respective gateelectrodes G1 to G3 that are formed to extend in a second direction DR2,and each of the first to third transistors TR1 to TR3 may include sourceand drain areas that are formed on active areas AR and arranged atopposite sides at each of the gate electrodes, and a channel area. Asillustrated in FIG. 1 , the first to third transistors TR1 to TR3 may beserially connected to each other. That is, the first and secondtransistors TR1 and TR2 may share a source or drain area, and the secondand third transistors TR2 and TR3 may share a source or drain area.

A first input voltage IN1 may be provided to a first gate electrode G1.The first input voltage IN1 or a ground voltage V_(SS) may beselectively provided to a second gate electrode G2. For example, thefirst input voltage IN1 or ground voltage V_(SS) may be provided througha first conductive line M1. Furthermore, a second input voltage IN2 maybe applied to a third gate electrode G3. For example, the first andsecond input voltages IN1 and IN2 may be a voltage for turning on eachof the first and third transistors TR1 and TR3. For example, the groundvoltage V_(SS) may be an insufficient voltage for turning on the secondtransistor TR2. Although it is explained that the ground voltage V_(SS)is used, some voltage, which is not insufficient to turn on the secondtransistor TR2, other than the ground voltage V_(SS) may be used.

As illustrated in FIGS. 1 and 2 , the ground voltage V_(SS) may beapplied to a source or drain area of the first transistor TR1, and theground voltage V_(SS) may be applied to a source or drain area that isshared by the second and third transistors TR2 and TR3. To apply theground voltage V_(SS), a second conductive line M2 may be arranged asillustrated in FIG. 1 . However, a conductive line for providing theground voltage V_(SS) may be limited thereto.

An output OUT1 from a source or drain area that is shared by the firstand second transistors TR1 and TR2 may be output through a thirdconductive line M3. In addition, an output OUT2 from another source ordrain area of the third transistor TR3 may be output through a fourthconductive line M4.

Because the second transistor TR2 is selectively turned on or offaccording to a voltage (or signal) inputted to the second gate electrodeG2, a function of the second transistor TR2 may be changed. For example,when the second transistor TR2 is turned off by applying the groundvoltage V_(SS) to the second gate electrode G2, the second transistorTR2 may serve as an isolator in which the first and third transistorsTR1 and TR3 are electrically insulated from each other. In contrast,when the second transistor TR2 is turned on by applying a first inputvoltage IN1 to the second gate electrode G2, the second transistor TR2may serve as a driver for improving a driving force of the semiconductordevice.

For example, a multiplexer MUX illustrated in FIGS. 2 and 3 may beselectively used to perform as one of the insulator and the driver.Referring to FIGS. 1 and 2 , during a first operation mode, amultiplexer MUX may select the ground voltage V_(SS) as a voltage thatis applied to a second gate electrode G2. As a result, because thesecond transistor TR2 is turned off, the second transistor TR2 may serveas an isolator for electrically insulating the first and secondtransistors TR1 and TR2 from each other. For example, the multiplexerMUX may be controlled by a separate control signal.

Furthermore, referring to FIGS. 1 and 3 , during a second operationmode, the multiplexer MUX may select the first input voltage IN1 (e.g.,a power voltage) as a voltage that is applied to the second gateelectrode G2. As a result, the second transistor TR2 is turned on, andthus the second transistor TR2 may serve as a driver for improving adriving force of the semiconductor device. In the example embodiments ofFIGS. 1, 2, and 3 , the first operation mode and the second operationmode are selectively executed through the multiplexer MUX. However,according to example embodiments, in a semiconductor device, a circuitfor performing the first operation mode and a circuit for performing thesecond operation mode may be implemented at the same time. This will bedescribed with reference to FIG. 4 .

FIG. 4 is a block diagram illustrating a System on Chip (SOC) accordingto example embodiments. Referring to FIG. 4 , an SOC 100 may include afirst static random access memory (SRAM) 110 and a second SRAM 120.

The first SRAM 110 and the second SRAM 120 may perform substantially thesame function as each other. However, a size of the first SRAM 110 isgreater than that of the second SRAM 120. In more detail, the number ofbit lines connected to a sense amplifier circuit of the first SRAM 110is greater than the number of bit lines connected to a sense amplifiercircuit of the second SRAM 120.

For example, as described above, the first SRAM 110 may include asemiconductor device that performs a function (e.g., an insulating layerfunction) at the first operation mode described with reference to FIGS.1 and 2 . In contrast, the second SRAM 120 may include a semiconductordevice that performs a function (e.g., a driver function) at the secondoperation mode described with reference to FIGS. 1 and 3 .

As such, even though the first SRAM 120 performs the same function asthe second SRAM 110, the first and second SRAMs 110 and 120 may performdifferent operation modes based on the size and usage thereof,respectively, thereby improving an insulating function and driving forceof the SRAMs.

FIG. 5 is a block diagram illustrating one of the first SRAM 110 and thesecond SRAM 120 illustrated in FIG. 4 . Referring to FIG. 5 , an SRAM200 may include an SRAM cell array 210, a sense amplifier circuit 220,an address (ADDR) decoder 230, control logic 240, and an input/output(I/O) circuit 250.

The SRAM cell array 210 may include SRAM cells connected to a pluralityof bit lines BL and a plurality of word lines WL. Each of the SRAM cellsmay be accessed through a word line and a bit line. Each of the SRAMcells may be connected to a bit line pair BL and/BL based on a word linevoltage. Each of the SRAM cells may include a latch circuit, and passtransistors that receive the word line voltage as a gate voltage. Duringa sensing operation, voltages of the bit line pair BL and/BL that isprecharged according to data stored in a latch circuit may vary. Thedata may be sensed by sensing the varied voltage.

The sense amplifier circuit 220 may include a plurality of senseamplifiers (S/A) 221 to 22 n. The bit line pair BL and/BL may beconnected to each of the sense amplifiers. During a sensing operation,each of the sense amplifiers may sense data by sensing voltagefluctuations of the bit line pair BL and/BL.

The address decoder 230 may decode an address ADDR, which is receivedfrom an external device, to select any one or any combination of aplurality of word lines WL.

The control logic 240 may control an overall operation of the SRAM 200.For example, the control logic 240 may send a sense amplifier enablesignal SAE, which is received from the input/output circuit 250, to thesense amplifier circuit 220. For example, the control logic 240 mayinclude a delay chain circuit 242 that delays a sense amplifier enablesignal IN_SAE received from the input/output circuit 250 to output thedelayed sense amplifier enable signal OUT_SAE.

The input/output circuit 250 may exchange input/output (I/O) data (e.g.,write data or read data) with the external device (e.g., a controller).The input/output circuit 250 may send an address, which is received fromthe external device, to the address decoder 230. The input/outputcircuit 250 may send the sense amplifier enable signal SAE, which isreceived from the external device, to the control logic 240.

Referring to FIG. 5 , during a read operation of the SRAM 200, a wordline WL of the SRAM cell array 210 may be activated by the addressdecoder 230, and one of the bit line pair BL and/BL based on data storedin an SRAM cell may be discharged. Thereafter, when the sense amplifiercircuit 220 is activated by the sense amplifier enable signal SAE, avoltage difference between a bit line pair BL and/BL may be amplified bythe sense amplifier circuit 220. That is, there may be a sufficient termbetween a point in time when the word line WL of the SRAM cell array 210is activated and a point in time when the sense amplifier circuit 220 isactivated by the sense amplifier enable signal SAE. Hereinafter, thisterm may be referred to as “WL-to-SAE term.”

FIG. 6 is a view illustrating waveforms of signals during a readoperation of the first SRAM 110 illustrated in FIG. 4 . FIG. 7 is a viewillustrating waveforms of signals during a read operation of the secondSRAM 120 illustrated in FIG. 4 . Referring to FIGS. 6 and 7 ,discharging of a bit line BL begins at a point in time t1 whenactivation of the word line WL begins. In addition, the sense amplifierenable signal SAE is activated at a point in time when the activation ofthe word line WL ends. That is, the sense amplifier enable signal SAE isactivated at a point in time t2 when the bit line BL is sufficientlydischarged.

A read operation of the first SRAM 110 will be described with referenceto FIGS. 4, 5 and 6 . In the first SRAM 110 that has a relatively largesize, the WL-to-SAE term t1 to t3 may be relatively long. In moredetail, the WL-to-SAE term may become longer as the number of SRAMcells, which are connected to a bit line pair BL and/BL connected toeach of the sense amplifiers S/A of the sense amplifier circuit 220,increases. The reason is that a relatively long time is used todischarge the SRAM cells during a read operation of the SRAM 200. Toperform this function, a delay chain circuit 242 is used to increase adelay amount of the sense amplifier enable signal SAE.

A read operation of the first SRAM 120 will be described with referencewith FIGS. 4, 5, and 7 . In the second SRAM 120 that has a relativelysmall size, the WL-to-SAE term t1 to t3 may be relatively short. In moredetail, the WL-to-SAE term may become shorter as the number of SRAMcells, which are connected to a bit line pair BL and/BL connected toeach of the sense amplifiers S/A of the sense amplifier circuit 220,decreases. The reason is that a relatively short time is used todischarge the SRAM cells during a read operation of the SRAM 200. Toperform this function, the delay chain circuit 242 is used to decrease adelay amount of the sense amplifier enable signal SAE.

As described above, the WL-to-SAE term may vary according to aconfiguration of the SRAM (e.g., the number of SRAM cells connected to abit line). Accordingly, the semiconductor device described withreference with FIGS. 1 to 3 may be used to implement the delay chaincircuits 242 that adjust the WL-to-SAE term in consideration of theconfiguration of the SRAM. This will be described in more detail withreference to FIGS. 8 to 15 .

FIG. 8 is a detailed circuit diagram of the delay chain circuit 242 ofFIG. 5 . For example, a delay chain circuit 300 illustrated in FIG. 8may be the first SRAM 110 of a relatively large size illustrated in FIG.4 . To help understanding, example embodiments will be described withreference to FIGS. 5, 6, and 8 .

The delay chain circuit 300 may include a delay chain block 310 and anisolation circuit 320. The delay chain block 310 may include a pluralityof inverters 311 to 314 serially connected to each other. In exampleembodiments, the delay chain block 310 includes four inverters. However,example embodiments may be not limited thereto. The isolation circuit320 may include a plurality of isolators 321 to 324. Likewise, inexample embodiments, the isolation circuit 320 includes four isolators.However, example embodiments may be not limited thereto.

The delay chain block 310 may receive an input signal to output thedelayed input signal. For example, the delay chain block 310 may receivea sense amplifier enable signal IN_SAE from the input/output circuit 250to output a delayed sense amplifier enable signal OUT_SAE. For example,the sense amplifier enable signal IN_SAE may be delayed by (t2-t1)through the delay chain block 310. For example, each of the invertersconstituting the delay chain block 310 may be implemented with a PMOStransistor and an NMOS transistor. However, configuration of the delaychain block 310 may be not limited thereto.

Each of the isolators constituting the isolation circuit 320 may beimplemented with a PMOS transistor and an NMOS transistor. For example,the isolators may be connected to the inverters, respectively. Forexample, an output terminal of a first isolator 321 may be connected toan output terminal of a first inverter 311. An output terminal of asecond isolator 322 may be connected to an output terminal of a secondinverter 312. Output terminals of third and fourth isolators 323 and 324may be also connected in a manner similar to those of the first andsecond isolators, respectively.

A power supply voltage V_(DD) may be applied to one end of each of thePMOS transistors constituting the isolation circuit 320, and a groundvoltage V_(SS) may be applied to one end of each of the NMOS transistorsconstituting the isolation circuit 320. Furthermore, the power supplyvoltage V_(DD) may be applied to a gate terminal of each of the PMOStransistors constituting the isolation circuit 320, and the groundvoltage V_(SS) may be applied to a gate terminal of each of the NMOStransistors constituting the isolation circuit 320. As a result, thePMOS and NMOS transistors constituting the isolation circuit 320 may beturned off, and thus the isolation circuit 320 may electrically insulatethe delay chain block 310 from other circuits adjacent to the delaychain block 310.

FIG. 9 is a plan view illustrating a portion of a layout of the delaychain circuit 300 illustrated in FIG. 8 . In example embodiments, alayout of the first inverter 311 and the first isolator 321 of the delaychain circuit 300 is illustrated in FIG. 9 .

To help understanding, referring to FIGS. 8 and 9 , a first activeregion AR1 and a second active region AR2 may be formed on a substrate.For example, the first active region AR1 and the second active regionAR2 may extend in a first direction DR1 and may be arranged along asecond direction DR2 perpendicular to the first direction DR1. Each ofthe first and second active regions AR1 and AR2 may include source anddrain areas and channel areas for forming respective transistors. Forexample, the substrate Sub may be a silicon substrate, a germaniumsubstrate, or a silicon on insulator (SOI) substrate.

The first and second transistors TR1 and TR2 may be formed on the firstactive region AR1. For example, each of the first and second transistorsTR1 and TR2 may be a PMOS FET.

The first and second transistors TR1 and TR2 may include respective gateelectrodes G1 and G2 formed to extend in the second direction DR2, andeach of the first and second transistors TR1 and TR2 may include sourceareas S1 and S2 and drain areas D1 and D2 formed on the first activeregion AR1 and arranged at opposite sides of each of the gate electrodesG1 and G2, and a channel area. As illustrated in FIG. 9 , the first andsecond transistors TR1 and TR2 may be serially connected to each other.That is, the first and second transistors TR1 and TR2 may share a sourceor drain area.

The third and fourth transistors TR3 and TR4 may be formed on the secondactive region AR2. For example, each of the third and fourth transistorsTR3 and TR4 may be an NMOS FET.

The third and fourth transistors TR3 and TR4 may include respective gateelectrodes G1 and G3 formed to extend in the second direction DR2, andeach of the third and fourth transistors TR3 and TR4 may include sourceareas S3 and S4 and drain areas D3 and D4 formed on the second activeregion AR2 and arranged at opposite sides of each of the gate electrodesG1 and G3, and a channel area. That is, the second and fourthtransistors TR2 and TR4 may not share a gate electrode (e.g., the secondgate electrode G2). As illustrated in FIG. 9 , the third to fourthtransistors TR3 to TR4 may be serially connected to each other. That is,the third and fourth transistors TR3 and TR4 may share a source or drainarea.

The sense amplifier enable signal IN_SAE may be applied to the firstgate electrode G1. The power supply voltage V_(DD) may be applied to thesecond gate electrode G2. In addition, the ground voltage V_(SS) may beapplied to the third gate electrode G3. For example, the sense amplifierenable signal IN_SAE may be applied to the first gate electrode G1through a first conductive line M1. For example, the power supplyvoltage V_(DD) may be applied to the second gate electrode G2 through asecond conductive line M2. For example, the ground voltage V_(SS) may beapplied to the third gate electrode G3 through a third conductive lineM3. For example, the ground voltage V_(SS) may be a voltage insufficientto turn on the third transistor TR3. However, some voltage, which is notinsufficient to turn on the third transistor TR3, other than the groundvoltage V_(SS) may be used.

The power supply voltage V_(DD) may be applied to the source or drainarea of the first transistor TR1, and the power supply voltage V_(DD)may be applied to the source or drain area of the second transistor TR2.The ground voltage V_(SS) may be applied to the source or drain area ofthe third transistor TR3, and the ground voltage V_(SS) may be appliedto the source or drain area of the fourth transistor TR4.

For example, the power supply voltage V_(DD) may be applied to the firstand second transistors TR1 and TR2 through the second conductive lineM2. For example, the ground voltage V_(SS) may be applied to the thirdand fourth transistors TR3 and TR4 through a third conductive line M3.However, the configuration for applying the power supply voltage V_(DD)and the ground voltage V_(SS) is not limited thereto.

The output signal OUT_SAE from the source or drain area, which is sharedby the first and second transistors TR1 and TR2, may be output through afourth conductive line M4. The output signal OUT_SAE from the source ordrain area, which is shared by the third and fourth transistors TR3 andTR4, may be output through the fourth conductive line M4. However, inexample embodiments, the first isolator 321, which is composed of thesecond and fourth transistors TR2 and TR4, may remain at a turn-offstate. Accordingly, a signal, which is output through the fourthconductive line M4, may be a signal that is output from the firstinverter 311 composed of the first and third transistors TR1 and TR3.

According to the layout and bias condition described with reference toFIG. 9 , the first isolator 321, which is composed of the second andfourth transistors TR2 and TR4, may electrically insulate the firstinverter 311 from another device. For example, the first isolator 321may electrically insulate the first inverter 311 from a transistorincluding a fourth gate electrode G4.

The delay chain circuit 300 may be implemented as illustrated in FIG. 8by appropriately placing the layout illustrated in FIG. 9 . Becauseoutputs of the first inverter 311 and the first isolator 321 are used asan input of the second inverter 312, an appropriate conductive line forsuch a configuration may be used, and a detailed description thereofwill not be repeated here.

According to the delay chain circuit 300 implemented by using the layoutillustrated in FIG. 9 , there is no need to place a separate device forelectrical isolation, and there is no need to increase a distancebetween gate electrodes. An insulation device may be implemented byusing a placement of a layout and adjusting a bias condition, therebyimproving area efficiency and insulating performance.

FIG. 10 is a detailed circuit diagram of the delay chain circuit 242 ofFIG. 5 . For example, a delay chain circuit 400 illustrated in FIG. 10may be the first SRAM 120 of a relatively small size illustrated in FIG.4 . To help understanding, example embodiments will be described withreference to FIGS. 5, 7, and 10 .

The delay chain circuit 400 may include a delay chain block 410 and adriving circuit 420. The delay chain block 410 may include a pluralityof inverters 411 to 414 serially connected to each other. In exampleembodiments, the delay chain block 410 includes four inverters. However,example embodiments are not limited thereto. The driving circuit 420 mayinclude a plurality of drivers 421 to 424. Likewise, in exampleembodiments, the driving circuit 420 includes four drivers. However,example embodiments are not limited thereto.

The delay chain block 410 may receive an input signal to output adelayed input signal. For example, the delay chain block 410 may receivethe sense amplifier enable signal IN_SAE to output the delayed senseamplifier enable signal OUT_SAE. For example, the sense amplifier enablesignal IN_SAE may be delayed by (t2-t1) through the delay chain block410. However, a delay time of the delay chain block 410 may be shorterthan that of the delay chain block 310 (refer to FIG. 8 ). For example,each of the inverters constituting the delay chain block 410 may beimplemented with PMOS and NMOS transistors.

Each of the drivers constituting the driving circuit 420 may beimplemented with the PMOS and NMOS transistors. For example, the driversmay be connected in parallel to the inverters, respectively. Forexample, input and output terminals of a first driver 421 may beconnected to input and output terminals of a first driver 411,respectively. Input and output terminals of second to fourth drivers 422to 424 may be also connected in a manner similar to those of the firstdriver 411.

The power supply voltage V_(DD) may be applied to the input terminals ofthe inverters constituting the driving circuit 420. As a result, thedriving circuit 420 may improve driving ability of the delay chain block410. That is, a delay time of the delay chain block 410 may becomerelatively short

FIG. 11 is a plan view illustrating a portion of a layout of the delaychain circuit 400 illustrated in FIG. 10 . In example embodiments, alayout of the first inverter 411 and the first driver 421 of the delaychain circuit 400 is illustrated in FIG. 11 .

To help understanding, referring to FIGS. 10 and 11 , first and secondactive regions AR1 and AR2 may be formed on a substrate. Each of thefirst and second active regions AR1 and AR2 may include source and drainareas, and a channel area for forming a transistor. For example, thesubstrate Sub may be a silicon substrate, a germanium substrate, or asilicon on insulator (SOI) substrate.

The first and second transistors TR1 and TR2 may be formed on the firstactive region AR1. For example, each of the first and second transistorsTR1 and TR2 may be a PMOS FET.

The first and second transistors TR1 and TR2 may include respective gateelectrodes G1 and G2 formed to extend in the second direction DR2, andeach of the first and second transistors TR1 and TR2 may include sourceand drain areas formed on the first active region AR1 and arranged atopposite sides of each of the gate electrodes G1 and G2, and channelareas. As illustrated in FIG. 11 , the first and second transistors TR1and TR2 may be serially connected to each other. That is, the first andsecond transistors TR1 and TR2 may share a source or drain area.

The third and fourth transistors TR3 and TR4 may be formed on the secondactive region AR2. For example, each of the third and fourth transistorsTR3 and TR4 may be an NMOS FET.

The third and fourth transistors TR3 and TR4 may include the respectivegate electrodes G1 and G2 formed to extend in the second direction DR2,and each of the third and fourth transistors TR3 and TR4 may includesource and drain areas formed on the second active region AR2 andarranged at opposite sides of each of the gate electrodes G1 and G2, andchannel areas. As illustrated in FIG. 11 , the third and fourthtransistors TR3 and TR4 may be serially connected to each other. Thatis, the third transistor TR3 may share the gate electrode G1 with thefirst transistor TR1, and the fourth transistor TR4 may share the gateelectrode G2 with the second transistor TR2. Furthermore, the third andfourth transistors TR3 and TR4 may share a source or drain area.

The sense amplifier enable signal IN_SAE may be applied to the first andsecond gate electrodes G1 and G2. For example, the sense amplifierenable signal IN_SAE may be applied to the first and second gateelectrodes G1 and G2 through a first conductive line M1.

The power supply voltage V_(DD) may be applied to the source or drainarea of the first transistor TR1, and the power supply voltage V_(DD)may be applied to the source or drain area of the second transistor TR2.The ground voltage V_(SS) may be applied to the source or drain area ofthe third transistor TR3, and the ground voltage V_(SS) may be appliedto the source or drain area of the fourth transistor TR4.

For example, the power supply voltage V_(DD) may be applied to the firstand second transistors TR1 and TR2 through the second conductive lineM2. For example, the ground voltage V_(SS) may be applied to the thirdand fourth transistors TR3 and TR4 through a third conductive line M3.However, the configuration for applying the power supply voltage V_(DD)and the ground voltage V_(SS) is not limited thereto.

The output signal OUT_SAE from the source or drain area, which is sharedby the first and second transistors TR1 and TR2, may be output through afourth conductive line M4. The output signal OUT_SAE from the source ordrain area, which is shared by the third and fourth transistors TR3 andTR4, may be output through the fourth conductive line M4.

According to the layout and bias condition described with reference toFIG. 11 , the first driver 421, which is composed of the second andfourth transistors TR2 and TR4, may improve the driving ability of thefirst inverter 411. That is, a delay time of the delay chain block 410may be shorter than that of the delay chain block 310 (refer to FIG. 8).

The delay chain circuit 400 may be implemented as illustrated in FIG. 10by appropriately placing the layout illustrated in FIG. 11 . Becauseoutputs of the first inverter 411 and the first driver 421 are used asan input of the second inverter 412, an appropriate conductive line forsuch a configuration may be used. Thus, a detailed description thereofwill not be repeated here.

As described above, it is understood from FIGS. 9 and 11 that theabove-described semiconductor devices, which perform differentfunctions, have similar layouts. That is, the isolation circuit 320 ofFIG. 9 may electrically insulate the delay chain block 310 from anotherdevice, and the driving circuit 420 of FIG. 11 may reduce a delay timeof the delay chain block 410 (i.e., WL-to-SAE term). A differencebetween the isolator 320 of FIG. 9 and the driving circuit 420 of FIG.11 may be determined according to a bias condition and whether thesecond and forth transistors TR2 and TR4 share a gate electrode.

According to the example embodiments described with reference to FIGS. 8to 11 , devices, which differently affect the delay chain blocks 310 and410, may be implemented by using substantially the same layout butdifferently adjusting only bias conditions. As a result, a device, whichimproves area efficiency, insulating performance, or driving ability,may be selectively used according to a configuration of the SRAM.

FIG. 12 is a detailed circuit diagram of the delay chain circuit 242 ofFIG. 5 . For example, a delay chain circuit 500 illustrated in FIG. 12may be one of the first and second SRAMs 110 and 120 that areillustrated in FIG. 4 . To help understanding, example embodiments willbe described with reference to FIGS. 5, 6, 7, and 12 .

The delay chain circuit 500 may include a delay chain block 510, anassistance block 520, and a multiplexing circuit 530. The delay chainblock 510 may include a plurality of inverters 511 to 514 seriallyconnected to each other. In example embodiments, the delay chain block510 includes four inverters. However, example embodiments are notlimited thereto. The assistance block 520 may include first to fourthassistance blocks 521 to 524. Likewise, in example embodiments, thedelay chain circuit 500 includes four assistance blocks. However,example embodiments are not limited thereto.

The delay chain block 510 may receive an input signal to output thedelayed input signal. For example, the delay chain block 510 may receivethe sense amplifier enable signal IN_SAE to output the delayed senseamplifier enable signal OUT_SAE. For example, the sense amplifier enablesignal IN_SAE may be delayed by (t2-t1) through the delay chain block510. For example, each of the inverters constituting the delay chainblock 510 may be implemented with PMOS and NMOS transistors.

Each of the first to fourth assistance blocks 521 to 524 may include aPMOS transistor and an NMOS transistor that are serially connected toeach other. A power supply voltage V_(DD) may be applied to one end ofthe PMOS transistor, and a ground voltage V_(SS) may be applied to oneend of the NMOS transistor. Furthermore, an output terminal between thePMOS transistor and the NMOS transistor may be connected to an outputterminal of a first inverter 511 corresponding thereto.

A first multiplexer MUX1 may be connected to gate electrodes of PMOStransistors that constitute the first to fourth assistance blocks 521 to524. Furthermore, a second multiplexer MUX2 may be connected to gateelectrodes of NMOS transistors that constitute the first to fourthassistance blocks 521 to 524. The first multiplexer MUX1 may select oneof the sense amplifier enable signal IN_SAE and the power supply voltageV_(DD)under control of the external device. In addition, the secondmultiplexer MUX2 may select one of the sense amplifier enable signalIN_SAE and the ground voltage V_(SS) under control of the externaldevice.

FIG. 13 is a circuit diagram of the delay chain circuit 500 illustratedin FIG. 12 , at the first operation mode. During the first operationmode, the first multiplexer MUX1 may select the power supply voltageV_(DD) among the sense amplifier enable signal IN_SAE and the powersupply voltage V_(DD) based on a control signal CTRL. Furthermore,during the first operation mode, the second multiplexer MUX2 may selectthe ground voltage V_(SS) among the sense amplifier enable signal IN_SAEand the ground voltage V_(SS) based on the control signal CTRL. In thiscase, transistors constituting the assistance block 520 may be turnedoff, and thus the assistance block 520 may electrically insulate thedelay chain block 510 from another device. This electrical insulatingfunction may be similar to described with reference to FIG. 8 , and thusa duplicated description will not be repeated here.

FIG. 14 is a circuit diagram of the delay chain circuit 500 illustratedin FIG. 12 , at the second operation mode. During a second operationmode, the first multiplexer MUX1 may select the sense amplifier enablesignal IN_SAE among the sense amplifier enable signal IN_SAE and thepower supply voltage V_(DD) based on the control signal CTRL.Furthermore, during the second operation mode, the second multiplexerMUX2 may select the sense amplifier enable signal IN_SAE among the senseamplifier enable signal IN_SAE and the ground voltage V_(SS) based onthe control signal CTRL. In this case, transistors constituting theassistance block 520 may be turned on, and thus the assistance block 520may serve as a driver that improves driving ability of the delay chainblock 510. This driver function may be similar to that described withreference to FIG. 10 , and thus a duplicated description will not berepeated here.

According to the above-described, an operation mode may be selectedaccording to a control signal from the external device. For example, tomaintain the WL-to-SAE term of the SRAM to be long, the delay chaincircuit 500 may enter the first operation mode based on the controlsignal CTRL. In this case, the assistance block 520 may operate as anisolation circuit; the WL-to-SAE term of the SRAM may be affected by thedelay chain block 510. In contrast, to maintain the WL-to-SAE term ofthe SRAM to be short, the delay chain circuit 500 may enter the firstoperation mode based on the control signal CTRL. In this case, becausethe assistance block 520 operates as a driving circuit; the WL-to-SAEterm of the SRAM may be reduced due to an increase of driving ability bythe assistance block 520.

FIG. 15 is a plan view illustrating a portion of a layout of the delaychain circuit 500 illustrated in FIG. 12 . In example embodiments, alayout of the first inverter 511 and the first assistance block 521 ofthe delay chain circuit 500 is illustrated in FIG. 13 .

To help understanding, referring to FIGS. 12 and 15 , the first andsecond active regions AR1 and AR2 may be formed on a substrate. Each ofthe first and second active regions AR1 and AR2 may include source anddrain areas, and channel areas for forming transistors. For example, thesubstrate Sub may be a silicon substrate, a germanium substrate, or asilicon on insulator (SOI) substrate.

The first and second transistors TR1 and TR2 may be formed on the firstactive region AR1. For example, each of the first and second transistorsTR1 and TR2 may be a PMOS FET.

The first and second transistors TR1 and TR2 may include respective gateelectrodes G1 and G2 formed to extend in the second direction DR2, andeach of the first and second transistors TR1 and TR2 may include sourceareas S1 and S2 and drain areas D1 and D2 formed on the first activeregion AR1 and arranged at opposite sides of each of the gate electrodesG1 and G2, and channel areas. As illustrated in FIG. 15 , the first tosecond transistors TR1 to TR2 may be serially connected to each other.That is, the first and second transistors TR1 and TR2 may share a sourceor drain area.

The third and fourth transistors TR3 and TR4 may be formed on the secondactive region AR2. For example, each of the third and fourth transistorsTR3 and TR4 may be an NMOS FET.

The third and fourth transistors TR3 and TR4 may include respective gateelectrodes G1 and G3 formed to extend in the second direction DR2, andeach of the third and fourth transistors TR3 and TR4 may include sourceareas S1 and S2 and drain areas D1 and D2 formed on the first activeregion AR2 and arranged at opposite sides of each of the gate electrodesG1 and G3, and channel areas. As illustrated in FIG. 15 , the third tofourth transistors TR3 to TR4 may be serially connected to each other.That is, the fourth transistor TR4 may not share a gate electrode with asecond transistor TR2. Furthermore, the third and fourth transistors TR3and TR4 may share a source or drain area.

The sense amplifier enable signal IN_SAE may be applied to the firstgate electrode G1. For example, the sense amplifier enable signal IN_SAEmay be applied to the first gate electrode G1 through a first conductiveline M1.

The sense amplifier enable signal IN_SAE or the power supply voltageV_(DD) may be selectively applied to the second gate electrodes G2. Forexample, the first multiplexer MUX1 may selectively apply the powersupply voltage V_(DD) to the second gate electrode G1 based on thecontrol signal from the external device. For example, the senseamplifier enable signal IN_SAE or the power supply voltage V_(DD) may beapplied to the second gate electrode G2 through a second conductive lineM2.

The power supply voltage V_(DD) may be applied to a source or drain areaof the first transistor TR1, and the power supply voltage V_(DD) may beapplied to a source or drain area of the second transistor TR2. Theground voltage V_(SS) may be applied to a source or drain area of thethird transistor TR3, and the ground voltage V_(SS) may be applied to asource or drain area of the fourth transistor TR4.

For example, the power supply voltage V_(DD) may be applied to the firstand second transistors TR1 and TR2 through a third conductive line M3.For example, the ground voltage V_(SS) may be applied to the third andfourth transistors TR3 and TR4 through a fourth conductive line M4.However, the configuration for applying the power supply voltage V_(DD)and the ground voltage V_(SS) is not limited thereto.

An output signal OUT_SAE from a source or drain area, which is shared bythe first and second transistors TR1 and TR2, may be output through afifth conductive line M5. Furthermore, the output signal OUT_SAE from asource or drain area, which is shared by the third and fourthtransistors TR3 and TR4, may be output through the fifth conductive lineM5. However, when the delay chain circuit 500 operates at the firstoperation mode, the assistance block 520 may operate as an isolationcircuit. Accordingly, an output from the second and fourth transistorsTR2 and TR4 may be absent.

A function of the assistance block 520 may be selected according to thelayout and bias condition described with reference to FIG. 13 . Forexample, when the delay chain circuit 500 operates under the firstoperation mode, the power supply voltage V_(DD) may be applied to thesecond conductive line M2, and the ground voltage V_(SS) may be appliedto a sixth conductive line M6. As a result, the first assistance block521, which is composed of the second transistor TR2 and the fourthtransistor TR4, may electrically insulate the first inverter 311composed of the first transistor TR1 and the third transistor TR3 fromanother device.

In contrast, when the delay chain circuit 500 operates under the secondoperation mode, the sense amplifier enable signal IN_SAE may be appliedto the second conductive line M2, and the sense amplifier enable signalIN_SAE may be applied to a sixth conductive line M6. As a result, thefirst assistance block 521, which is composed of the second and fourthtransistors TR2 and TR4, may electrically operate as a driver thatimproves driving ability of the first inverter 511 composed of the firstand third transistors TR1 and TR3.

An operation mode of the delay chain circuit 500 may be selectedaccording to a configuration of the SRAM (e.g., the number of the SRAMsconnected to a bit line pair BL and/BL), thereby improving areaefficiency, insulating performance, or driving ability of the SRAM.Moreover, the reliability of the SRAM may be enhanced.

As described above, the layout of the semiconductor device that adjuststhe WL-to-SAE term of the SRAM based on an operation mode is described.However, a semiconductor device that performs different functions basedon the operation mode may be also used as a driving circuit for drivinga load. For example, the input/output circuit 250 illustrated in FIG. 5may be the driving circuit, which will be described with reference toFIGS. 16 to 21 in more detail.

FIG. 16 is a circuit diagram illustrating the input/output circuit 250illustrated in FIG. 5 . For example, an input/output circuit 600illustrated in FIG. 16 may be an input/output circuit of the second SRAM120 illustrated in FIG. 4 . That is, the input/output circuit 600illustrated in FIG. 16 may be used when the number of loads isrelatively small (i.e., when a size of the SRAM is relatively small).

The input/output circuit 600 may include a driving circuit 610 and aload circuit 620. The driving circuit 610 may include an inverter 611and an isolator 613. The load circuit 620 may include a plurality ofloads 621 to 62 n. For example, the driving circuit 610 that receives aninput signal IN may output an output signal OUT. Furthermore, each ofthe loads connected to the load circuit 620 may be driven by an outputsignal OUT to output data.

The isolator 613 may include a PMOS transistor and an NMOS transistor. Apower supply voltage V_(DD) may be applied to one end of the PMOStransistor, and a ground voltage V_(SS) may be applied to one end of theNMOS transistor. The power supply voltage V_(DD) may be applied to agate terminal of the PMOS transistor, and the ground voltage V_(SS) maybe applied to a gate terminal of the NMOS transistor. As a result,transistors constituting the isolator 613 may be turned off, and thusthe isolator 613 may electrically insulate the inverter 611 from othercircuits adjacent to the inverter 611.

FIG. 17 is a plan view illustrating a portion of a layout of the drivingcircuit 610 illustrated in FIG. 16 . To help understanding, referring toFIGS. 16 and 17 , first and second active regions AR1 and AR2 may beformed on a substrate. Each of the first and second active regions AR1and AR2 may include source and drain areas, and channel areas forforming transistors. For example, the substrate Sub may be a siliconsubstrate, a germanium substrate, or a silicon on insulator (SOI)substrate.

The first and second transistors TR1 and TR2 may be formed on the firstactive region AR1. For example, each of the first and second transistorsTR1 and TR2 may be a PMOS FET.

The first and second transistors TR1 and TR2 may include respective gateelectrodes G1 and G2 formed to extend in the second direction DR2, andeach of the first and second transistors TR1 and TR2 may include sourceand drain areas formed on the first active region AR1 and arranged atopposite sides of each of the gate electrodes, and a channel area. Asillustrated in FIG. 17 , the first to second transistors TR1 to TR2 maybe serially connected to each other. That is, the first and secondtransistors TR1 and TR2 may share a source or drain area.

The third and fourth transistors TR3 and TR4 may be formed on the secondactive region AR2. For example, each of the third and fourth transistorsTR3 and TR4 may be an NMOS FET.

The third and fourth transistors TR3 and TR4 may include respective gateelectrodes G1 and G3 formed to extend in the second direction DR2, andeach of the third and fourth transistors TR3 and TR4 may include sourceand drain areas formed on the first active region AR2 and arranged atopposite sides of each of the gate electrodes G1 and G3, and channelareas. That is, the second and fourth transistors TR2 and TR4 may notshare a gate electrode. As illustrated in FIG. 17 , the third to fourthtransistors TR3 to TR4 may be serially connected to each other. That is,the third and fourth transistors TR3 and TR4 may share a source or drainarea.

An input voltage IN may be provided to the first gate electrode G1. Thepower supply voltage V_(DD) may be applied to the second gate electrodeG2. In addition, the ground voltage V_(SS) may be applied to the thirdgate electrode G3. For example, the input signal IN may be applied tothe first gate electrode G1 through a first conductive line M1. Forexample, the power supply voltage V_(DD) may be applied to the secondgate electrode G2 through a second conductive line M2. For example, theground voltages V_(SS) may be applied to the third gate electrode G3through a third conductive line M3.

The power supply voltage V_(DD) may be applied to a source or drain areaof the first transistor TR1, and the power supply voltage V_(DD) may beapplied to a source or drain area of the second transistor TR2. Theground voltage V_(SS) may be applied to a source or drain area of thethird transistor TR3, and the ground voltage V_(SS) may be applied to asource or drain area of the fourth transistor TR4.

For example, the power supply voltage V_(DD) may be applied to the firstand second transistors TR1 and TR2 through the second conductive lineM2. For example, the ground voltage V_(SS) may be applied to the thirdand fourth transistors TR3 and TR4 through the third conductive line M3.However, the configuration for applying the power supply voltage V_(DD)and the ground voltage V_(SS) is not limited thereto.

An output signal OUT from a source or drain area shared by the first andsecond transistors TR1 and TR2 may be output through a fourth conductiveline M4. Furthermore, the output signal OUT_SAE from a source or drainarea, which is shared by the third and fourth transistors TR3 and TR4,may be output through a fourth conductive line M4. However, in exampleembodiments, the isolator 613, which is composed of the secondtransistor TR2 and the fourth transistor TR2, may be in a turn-offstate. Accordingly, a signal, which is output through the fourthconductive line M4, may be a signal that is output from an inverter 611composed of the first transistor TR1 and the third transistor TR3.

According to the layout and bias condition described with reference toFIG. 17 , the isolator 613, which is composed of the second transistorTR2 and the fourth transistor TR4, may electrically insulate theinverter 611 from another device. For example, the isolator 613 mayelectrically insulate the inverter 611 from a transistor including thefourth gate electrode G4.

FIG. 18 is a circuit diagram illustrating the input/output circuit 250illustrated in FIG. 5 . For example, an input/output circuit 700illustrated in FIG. 18 may be an input/output circuit of the first SRAM110 illustrated in FIG. 4 . That is, the input/output circuit 700illustrated in FIG. 18 may be used when the number of loads isrelatively greater (i.e., when a size of the SRAM is relativelygreater).

The input/output circuit 700 may include a driving circuit 710 and aload circuit 720. The driving circuit 710 may include an inverter 711and a driver 713. The load circuit 720 may include a plurality of loads721 to 72 n. For example, the number of the loads 721 to 72 nillustrated in FIG. 18 may be greater than that of the loads 621 to 62 nillustrated in FIG. 16 .

The driver 713 may include a PMOS transistor and an NMOS transistor. Apower supply voltage V_(DD) may be applied to one end of the PMOStransistor, and a ground voltage V_(SS) may be applied to one end of theNMOS transistor. An input signal IN may be applied to a gate terminal ofthe PMOS transistor and a gate terminal of the NMOS transistor. As aresult, the driver 713 may improve driving ability of the drivingcircuit 710. In the other, even though the number of the loads 721 to 72n is relatively greater, it is possible to secure driving abilitysufficient to drive the loads 721 to 72 n.

FIG. 19 is a plan view illustrating a portion of a layout of the drivingcircuit 710 illustrated in FIG. 18 . To help understanding, referring toFIGS. 18 and 19 , the first and second active regions AR1 and AR2 may beformed on a substrate. Each of the first and second active regions AR1and AR2 may include source and drain areas, and channel areas forforming transistors. For example, the substrate Sub may be a siliconsubstrate, a germanium substrate, or a silicon on insulator (SOI)substrate.

The first and second transistors TR1 and TR2 may be formed on the firstactive region AR1. For example, each of the first and second transistorsTR1 and TR2 may be a PMOS FET.

The first and second transistors TR1 and TR2 may include respective gateelectrodes G1 and G2 formed to extend in the second direction DR2, andeach of the first and second transistors TR1 and TR2 may include sourceand drain areas formed on the first active region AR1 and arranged atopposite sides of each of the gate electrodes G1 and G2, and channelareas. As illustrated in FIG. 17 , the first to second transistors TR1to TR2 may be serially connected to each other. That is, the first andsecond transistors TR1 and TR2 may share a source or drain area.

The third and fourth transistors TR3 and TR4 may be formed on the secondactive region AR2. For example, each of the third and fourth transistorsTR3 and TR4 may be an NMOS FET.

The third and fourth transistors TR3 and TR4 may include respective gateelectrodes G1 and G2 formed to extend in the second direction DR2, andeach of the third and fourth transistors TR3 and TR4 may include sourceand drain areas formed on the first active region AR2 and arranged atopposite sides of each of the gate electrodes G1 and G2, and channelareas. As illustrated in FIG. 19 , the third to fourth transistors TR3to TR4 may be serially connected to each other. That is, the third andfourth transistors TR3 and TR4 may share a source or drain area.

The input signal IN may be applied to first and second gate electrodesG1 and G2. The power supply voltage V_(DD) may be applied to the secondgate electrode G2. For example, the input signal IN may be applied tothe first and second gate electrodes G1 and G2 through a firstconductive line M1.

The power supply voltage V_(DD) may be applied to the source or drainarea of the first transistor TR1, and the power supply voltage V_(DD)may be applied to the source or drain area of the second transistor TR2.The ground voltage V_(SS) may be applied to the source or drain area ofthe third transistor TR3, and the ground voltage V_(SS) may be appliedto the source or drain area of the fourth transistor TR4.

For example, the power supply voltage V_(DD) may be applied to the firstand second transistors TR1 and TR2 through the second conductive lineM2. For example, the ground voltage V_(SS) may be applied to the thirdand fourth transistors TR3 and TR4 through a third conductive line M3.However, the configuration for applying the power supply voltage V_(DD)and the ground voltage V_(SS) is not limited thereto.

An output signal OUT from a source or drain area, which is shared by thefirst and second transistors TR1 and TR2, may be output through a fourthconductive line M4. Furthermore, the output signal OUT_SAE from a sourceor drain area, which is shared by the third and fourth transistors TR3and TR4, may be output through the fourth conductive line M4.

According to the layout and bias condition described with reference toFIG. 19 , the driver 713, which is composed of the second and fourthtransistors TR2 and TR4, may improve driving ability of the drivingcircuit 710.

As described above, semiconductor devices that perform differentfunctions are described with reference to FIGS. 17 and 19 , but it isunderstood that the layouts thereof are similar to each other. That is,the isolator 613 of FIG. 17 may electrically insulate the inverter 711from another device, and the driver 713 of FIG. 19 may improve drivingability of the driving circuit 710. The difference between the isolator613 of FIG. 17 and the driver 713 of FIG. 19 may be different form eachother in terms of the bias conditions and whether the second and forthtransistors TR2 and TR4 share a gate electrode.

According to the example embodiments illustrated with reference to FIGS.16 to 19 , devices that have different impacts on the driving circuit710 may be implemented by using substantially the same layout anddifferently adjusting only bias conditions. As a result, a device thatimproves area efficiency, insulating performance, or driving ability maybe selectively used according to a configuration of the SRAM.

FIG. 20 is a detailed circuit diagram of the input/output circuit 250 ofFIG. 5 . For example, an input/output circuit 800 illustrated in FIG. 20may be one of the first SRAM 110 and the second SRAM 120 that areillustrated in FIG. 4 . The input/output circuit 800 may include adriving circuit 810, a load circuit 820, and a multiplexing circuit 830.

The driving circuit 810 may include an inverter 811 and an assistancecircuit 813. The load circuit 820 may include a plurality of loads 821to 82 n. The driving circuit 810 may receive an input signal IN tooutput an output signal OUT. The inverter 811 of the driving circuit 810and the assistance circuit 813 may have output terminals thereofconnected to each other.

A power supply voltage V_(DD) may be applied to one end of a PMOStransistor, and a ground voltage V_(SS) may be applied to one end of anNMOS transistor. A gate electrode of the PMOS transistor of theassistance circuit 813 may be connected to an output terminal of a firstmultiplexer MUX1, and a gate electrode of the NMOS transistor of theassistance circuit 813 may be connected to an output terminal of asecond multiplexer MUX2.

The first multiplexer MUX1 may select one of the input signal IN and thepower supply voltage V_(DD) based on the control signal CTRL from theexternal device. Furthermore, the second multiplexer MUX2 may select oneof the input signal IN and the ground voltage V_(SS) based on thecontrol signal CTRL from the external device.

For example, during the first operation mode, the first multiplexer MUX1may select the power supply voltage V_(DD) under control of the controlsignal CTRL, and the second multiplexer MUX2 may select the groundvoltage V_(SS) under control of the control signal CTRL. As a result,the assistance circuit 813 may operate as an isolator that electricallyinsulates the inverter 811 from another device. Because the assistancecircuit 813 operates as the isolator, driving ability, which the drivingcircuit 810 originally has, may be maintained as it is. Accordingly, anoperation of the input/output circuit 800 at the first operation modemay be relatively suitable for the second SRAM 120 (refer to FIG. 4 ).

In contrast, during the second operation mode, the first and secondmultiplexers MUX1 and MUX2 may select the input signal IN under thecontrol signal CTRL. As a result, the assistance circuit 813 may operateas a driver that improves driving ability of the driving circuit 810.Because the assistance circuit 813 operates as the driver, drivingability that the driving circuit 810 has originally may be improved.Accordingly, an operation of the input/output circuit 800 at the secondoperation mode may be relatively suitable for the first SRAM 110 (referto FIG. 4 ).

FIG. 21 is a plan view illustrating a portion of a layout of theinput/output circuit 810 illustrated in FIG. 20 . In exampleembodiments, a layout of the inverter 811 and the assistance circuit 813of the input/output circuit 800 is illustrated in FIG. 21 .

To help understanding, referring to FIGS. 20 and 21 , first and secondactive regions AR1 and AR2 may be formed on a substrate. Each of thefirst and second active regions AR1 and AR2 may include source and drainareas, and channel areas for forming transistors. For example, thesubstrate Sub may be a silicon substrate, a germanium substrate, or asilicon on insulator (SOI) substrate.

The first and second transistors TR1 and TR2 may be formed on the firstactive region AR1. For example, each of the first and second transistorsTR1 and TR2 may be a PMOS FET.

The first and second transistors TR1 and TR2 may include respective gateelectrodes G1 and G2 formed to extend in the second direction DR2, andeach of the first and second transistors TR1 and TR2 may include sourceand drain areas formed on the first active region AR1 and arranged atopposite sides of each of the gate electrodes, and a channel area. Asillustrated in FIG. 21 , the first to second transistors TR1 to TR2 maybe serially connected to each other. That is, the first and secondtransistors TR1 and TR2 may share a source or drain area.

The third and fourth transistors TR3 and TR4 may be formed on the secondactive region AR2. For example, each of the third and fourth transistorsTR3 and TR4 may be an NMOS FET.

The third and fourth transistors TR3 and TR4 may include respective gateelectrodes G1 and G3 that are formed to extend in the second directionDR2, and each of the third and fourth transistors TR3 and TR4 mayinclude source and drain areas formed on the first active region AR2 andarranged at opposite sides of each of the gate electrodes, and a channelarea. As illustrated in FIG. 21 , the third to fourth transistors TR3 toTR4 may be serially connected to each other. That is, the fourthtransistor TR4 may not share a gate electrode with a second transistorTR2. Furthermore, the third and fourth transistors TR3 and TR4 may sharea source or drain area.

An input voltage IN may be provided to a first gate electrode G1. Forexample, the input signal IN may be applied to the first gate electrodeG1 through a first conductive line M1.

The input signal IN or the power supply voltage V_(DD) may beselectively applied to a second gate electrode G2. For example, thefirst multiplexer MUX1 may selectively apply the power supply voltageV_(DD) to the second gate electrode G1 based on the control signal CTRLfrom the external device. For example, the input signal IN or the powersupply voltage V_(DD) may be applied to the second gate electrode G2through a second conductive line M2.

The power supply voltage V_(DD) may be applied to the source or drainarea of the first transistor TR1, and the power supply voltage V_(DD)may be applied to the source or drain area of the second transistor TR2.The ground voltage V_(SS) may be applied to the source or drain area ofthe third transistor TR3, and the ground voltage V_(SS) may be appliedto the source or drain area of the fourth transistor TR4.

For example, the power supply voltage V_(DD) may be applied to the firstand second transistors TR1 and TR2 through a third conductive line M3.For example, the ground voltage V_(SS) may be applied to the third andfourth transistors TR3 and TR4 through a fourth conductive line M4.However, the configuration for applying the power supply voltage V_(DD)and the ground voltage V_(SS) is not limited thereto.

An output signal OUT from a source or drain area, which is shared by thefirst and second transistors TR1 and TR2, may be output through a fifthconductive line M5. Furthermore, the output signal OUT from a source ordrain area, which is shared by the third and fourth transistors TR3 andTR4, may be output through the fifth conductive line M5. However, whenthe input/output circuit 800 operates at the first operation mode, theassistance circuit 813 may operate as an isolator. Accordingly, anoutput from the second and fourth transistors TR2 and TR4 may be absent.

A function of the assistance circuit 813 may be selected based on thelayout and bias condition described with reference to FIG. 21 . Forexample, when the input/output circuit 800 operates under the firstoperation mode, the power supply voltage V_(DD) may be applied to thesecond conductive line M2, and the ground voltage V_(SS) may be appliedto a sixth conductive line M6. As a result, the assistance circuit 813,which is composed of the second and fourth transistors TR2 and TR4, mayelectrically insulate the inverter 811 composed of the first and thirdtransistors TR1 and TR3 from another device.

In contrast, when the input/output circuit 800 operates under the secondoperation mode, the input signal IN may be applied to the secondconductive line M2, and the input signal IN may be applied to a sixthconductive line M6. As a result, the assistance circuit 813, which iscomposed of the second and fourth transistors TR2 and TR4, mayelectrically operate as a driver that improves driving ability of theinverter 811 composed of the first and third transistors TR1 and TR3.

As described above, in example embodiments described with reference toFIGS. 17 to 21 , configuration and operation of input/output circuit ofthe SRAM may be described. However, example embodiments described withreference to FIGS. 17 to 21 are not limited thereto and may be used to adriving circuit configured to drive a plurality of loads. For example,the example embodiments may be also used to an input/output circuit of aflash memory device, an input/output circuit of a display panel, and thelike.

An operation mode of the input/output circuit 800 may be selectedaccording to the configuration of the SRAM (e.g., the number of loads),thereby improving area efficiency, insulating performance, or drivingability of the SRAM. Moreover, the reliability of the SRAM may beenhanced.

Example embodiments provide a layout of a semiconductor device thatselectively operates as an insulating circuit or a driving circuit.

According to example embodiments, area efficiency, insulatingperformance, or driving ability of the semiconductor device may beimproved.

Those of ordinary skill in the art will recognize that various changesand modifications of the example embodiments described herein can bemade without departing from the scope and spirit of the inventiveconcepts. If modifications of the example embodiments are includedwithin the scope of the following claims and equivalents, the inventiveconcepts are considered to include the modifications and variations ofthe example embodiments.

What is claimed is:
 1. A semiconductor device comprising: a first activeregion and a second active region extended in a first direction, thefirst active region and the second active region being provided in asubstrate; a first gate electrode extended in a second directionperpendicular to the first direction, wherein a first gate is extendedon the first active region and the second active region; a second gateelectrode extended in the second direction on the first active region; athird gate electrode extended in the second direction on the firstactive region and the second active region; a fourth gate electrodeextended in the second direction on the second active region, whereinthe second gate electrode and the fourth gate electrode are on a commonline of extent; a first source/drain contact provided on the firstactive region at a first side of the first gate electrode; a secondsource/drain contact provided on the first active region at a first sideof the second gate electrode; a third source/drain contact provided onthe second active region at the first side of the first gate electrode;a fourth source/drain contact provided on the second active region atthe first side of the fourth gate electrode; a first gate contactprovided on the first gate electrode; a second gate contact provided onthe second gate electrode; a third gate contact provided on the fourthgate electrode; a first conductive line connected to the first gateelectrode via the first gate contact; a second conductive line whichoverlaps at least part of the first source/drain contact, at least partof the second source/drain contact, and at least part of the second gatecontact in a plan view; a third conductive line which overlaps at leastpart of the third source/drain contact, at least part of the fourthsource/drain contact, and at least part of the third gate contact in theplan view; and a fourth conductive line provided on the first activeregion and the second active region between a second side of the firstgate electrode and a second sides of the second gate electrode and thefourth gate electrode, wherein a first voltage is provided to the secondconductive line, wherein a second voltage is provided to the thirdconductive line, wherein at least part of the third conductive lineextends in the first direction, the at least part of the thirdconductive line intersects with the fourth gate electrode in the planview, and wherein the first active region and the second active regionextend such that at least part of the first gate electrode, at leastpart of the second gate electrode, and at least part of the third gateelectrode overlap with the first active region in the plan view and atleast part of the first gate electrode, at least part of the third gateelectrode, and at least part of the fourth gate electrode overlap withthe second active region in the plan view.
 2. The semiconductor deviceof claim 1, wherein the first conductive line extends in the firstdirection, wherein at least part of the second conductive line extendsin the first direction, and wherein at least part of the thirdconductive line extends in the first direction.
 3. The semiconductordevice of claim 1, wherein the first voltage is a power supply voltageand the second voltage is a ground voltage.
 4. The semiconductor deviceof claim 1, wherein the second gate contact is provided on the secondgate electrode such that not to overlap with the first active region inthe plan view, and wherein the third gate contact is provided on thefourth gate electrode such that not to overlap with the second activeregion in the plan view.
 5. The semiconductor device of claim 1, whereinthe second gate contact is partially overlapped with the secondconductive line in the plan view, and wherein the third gate contact ispartially overlapped with the third conductive line in the plan view. 6.The semiconductor device of claim 1, wherein the first conductive lineis configured to receive a first signal, and wherein the thirdconductive line is configured to output a second signal.
 7. Thesemiconductor device of claim 1, further comprising: a fifthsource/drain contact provided on the first active region at a secondside of the first gate electrode and a second side of the second gateelectrode; and a sixth source/drain contact provided on the secondactive region at the second side of the first gate electrode and thesecond side of the fourth gate electrode.
 8. The semiconductor device ofclaim 7, wherein the fourth conductive line overlaps at least part ofthe fifth source/drain contact in the plan view, and wherein the fourthconductive line overlaps at least part of the sixth source/drain contactin the plan view.
 9. The semiconductor device of claim 1, wherein thefirst active region is a PMOS region, and the second active region is anNMOS region.
 10. The semiconductor device of claim 1, wherein the firstgate electrode, the first active region at the first side of the firstgate electrode, and the first active region at the second side of thefirst gate electrode comprise a first transistor, wherein the secondgate electrode, the first active region at the first side of the secondgate electrode, and an other first active region at the second side ofthe second gate electrode comprise a second transistor, wherein thefirst gate electrode, the second active region at the first side of thefirst gate electrode, and the second active region at the second side ofthe first gate electrode comprise a third transistor, and wherein thefourth gate electrode, the second active region at the first side of thefourth gate electrode, and the second active region at the second sideof the fourth gate electrode comprise a fourth transistor.
 11. Thesemiconductor device of claim 10, wherein, when the second transistorand the fourth transistor are turned-off, the second transistor and thefourth transistor comprises an isolator, and wherein, when the firsttransistor and the third transistor are turned-on, the first transistorand the third transistor comprises an inverter.